
	Part Number	Hot Search : 2SD0602A RF166 03870 200BG 4032K300 KRA352 OV4689 VRE210CA
	Product Description
	Full Text Search

PRHMB200E6 - IGBT Module-Dual

PRHMB200E6_7757999.PDF Datasheet


Part No.	PRHMB200E6
Description	IGBT Module-Dual
File Size	247.67K / 4 Page
Maker	Nihon Inter Electronics Corporation
Homepage	http://www.niec.co.jp/
Download	[ PRHMB200E6 Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ PRHMB200E6 Datasheet PDF Downlaod from Datasheet.HK ] [PRHMB200E6 Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for PRHMB200E6 ] [ Price & Availability of PRHMB200E6 by FindChips.com ]

Full text search : IGBT Module-Dual

Related Part Number

PART	Description	Maker
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 75A I(C) \| M:HL093HD5.6 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 150A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 100A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1KV V(BR)CES \| 50A I(C) TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 8A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 8A条一（c TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 15A I(C) \| M:HL080HD5.3 晶体管\| IGBT的\|正陈\|双\| 1KV交五（巴西）国际消费电子展\|5A一（c）\|米：HL080HD5.3 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 75A条一（c	Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
MG800J2YS50A	IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT	Toshiba Semiconductor
APTGF350DU60	Dual Common Source - IGBT Dual common source NPT IGBT Power Module	Advanced Power Technology
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9	:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,	http:// INTERSIL[Intersil Corporation] Intersil, Corp.
SK30GH12306 SK30GH123	IGBT Module IGBT模块 IGBT Module 33 A, 1200 V, N-CHANNEL IGBT	Semikron International
PDMB600E6C	IGBT Module-Dual	Nihon Inter Electronics Corporation
PRHMB75E6	IGBT Module-Dual	Nihon Inter Electronics Corporation
PDMB200BS12C	IGBT Module-Dual	Nihon Inter Electronics Corporation
PHMB400BS12	IGBT Module-Dual	Nihon Inter Electronics Corporation
PDMB50E6	IGBT Module-Dual	Nihon Inter Electronics Corporation
PRFMB200E6	IGBT Module-Dual	Nihon Inter Electronics Corporation
PRHMB300E6 PRHMB300E6C	IGBT Module-Dual	Nihon Inter Electronics Corporation

Related keyword From Full Text Search System

PRHMB200E6 Band	PRHMB200E6 fairchild	PRHMB200E6 Integrate	PRHMB200E6 参数查询	PRHMB200E6 crystal
PRHMB200E6 参数封装	PRHMB200E6 Supply	PRHMB200E6 Operation	PRHMB200E6 m85049	PRHMB200E6 Adjustable

Price & Availability of PRHMB200E6

All Rights Reserved © IC-ON-LINE 2003 - 2022

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]

Mirror Sites : [www.datasheet.hk] [www.maxim4u.com] [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com] [www.gdcy.net]

. . . . .

We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy.

X

0.37593483924866